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| PHOTOMULTlPLlER TUBE R5108 28mm (1-1/8 Inch) Transmission Mode S-1 Photocathode, Side-on Type FEATURES Wide Photocathode High Infrared Sensitivity Excellent Spatial Uniformity Fast Time Response APPLICATIONS Near Infrared Spectrophotometer Raman Spectrophotometer Photo Luminescence Measurement GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket Applicable Socket Assembly Figure 1: Electron Trajectories Description 400 to 1200 800 Ag-O-Cs 16(H) 18(W) Borosilicate glass GLASS BULB Unit nm nm LIGHT mm PHOTOELECTRONS PHOTOCATHODE Circular-cage 9 1.2 3.4 11-pin base JEDEC No. B11-88 E678-11A (option) E717-21 (option) pF pF FOCUSING ELECTRODES 1st DYNODE 3rd DYNODE TPMSC0003EB 2nd DYNODE Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 1994 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBE R5108 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode Current A 1500 250 0.1 Vdc Vdc mA NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio Value Unit CHARACTERISTlCS (at 25 Parameter Cathode Sensitivity Quantum Efficiency at 1060nm Luminous B Radiant at 800nm Anode Sensitivity Luminous C Gain C Anode Dark Current D (after 30min. storage in the darkness) Time Response Anode Pulse Rise Time Electron Transit Time F E ) Min. Typ. 0.04 25 2.2 Max. Unit % A/lm mA/W Electrodes Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P SuppIy Voltage : 1250Vdc K : Cathode, Dy : Dynode, P : Anode D: Measured at the voltage which gives anode luminous sensitivity of 4A/lm. E: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. F: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. 10 3.5 3.0 7.5 105 1000 A/lm 350 nA 1.2 18 ns ns Figure 2: Typical Spatial Uniformity X-Axis RELATIVE SENSITIVITY (%) 100 80 60 40 20 0 8 4 0 4 8 9 Y-Axis 100 80 60 40 20 0 4.5 0 4.5 9 Y SPOTSIZE : 1mm DIA SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm X DISTANCE FROM CENTER OF PHOTOCATHODE (mm) DISTANCE FROM CENTER OF PHOTOCATHODE (mm) TPMSB0066EA RELATIVE SENSITIVITY (%) Figure 3: Typical Spectral Response 100 TPMSB0041EA Figure 4: Typical Time Response TPMSB0042EA 200 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 CATHODE RADIANT SENSITIVITY 100 80 60 40 1 TRAN TIME (ns) 20 SIT TIM E 0.1 QUANTUM EFFICIENCY 10 8 6 4 0.01 2 0.001 200 RISE TIME 1000 1500 400 600 800 1000 1200 1 300 500 700 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 5: Typical Gain and Anode Dark Current Figure 6: Typical Temperature Characteristics of Anode Dark Current (at 4A/lm) 10-3 TPMSB0044EA 107 TPMSB0043EA 10-3 106 10-4 ANODE DARK CURRENT (A) 10-4 ANODE DARK CURRENT (A) 105 GAIN I GA N 10-5 10-5 104 10-6 10-6 103 R DA K CU E RR NT 10-7 10-7 102 600 700 800 1000 1200 10-8 1500 10-8 -40 -30 -20 -10 0 10 ) 20 30 40 SUPPLY VOLTAGE (V) TEMPERATURE ( PHOTOMULTlPLlER TUBE R5108 Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) 29.0 1.7 18MIN. PHOTOCATHODE DY6 6 DY5 16MIN. DY4 4 76MAX. 90MAX. DY3 3 DY2 2 5 7 DY7 8 DY8 9 DY9 10 P 49.0 2.5 1 11 K DY1 DIRECTION OF LIGHT BOTTOM VIEW (BASING DIAGRAM) 34MAX. 11 PIN BASE JEDEC No. B11-88 HA COATING TPMSA0023EA Figure 8: Optional Accessories (Unit: mm) Socket E678-11A 49 38 33.0 0.3 3.5 5 D Type Socket Assembly E717-21 PMT P R10 DY9 38.0 0.3 49.0 0.3 DY8 DY7 DY6 DY5 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND DY4 DY3 DY2 DY1 K 9 R9 8 R8 7 R7 6 5 4 R4 3 R3 450 10 2 R2 1 R1 11 -HV SOCKET PIN No. 10 C3 C2 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 3.5 33 29 4.8 R6 R to R10 : 330k C1 to C3 : 0.01 F R5 5 29 4 41.0 0.5 AWG22 (VIOLET) 18 R1 to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED TACCA0008EB Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1012E03 JUL. 1994 |
Price & Availability of R5108
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